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  january 2017 docid030271 rev 1 1 / 10 this is infor mation on a product in full production. www.st.com STPSC2H12 1200 v power schottky silicon carbide diode datasheet - production data features ? no or negligible reverse recovery ? switching behavior independent of temperature ? robust high voltage periphery ? operating t j from - 40 c to 175 c ? low v f ? ecopack ? 2 compliant description the sic diode, availa ble in to - 220ac and dpak hv, is an ultrahigh performance power schottky rectifier. it is manufactured using a silicon carbide substrate. the wide band - gap material allows the design of a low v f schottky diode structure with a 1200 v rating. due to the scho ttky construction, no recovery is shown at turn - off and ringing patterns are negligible. the minimal capacitive turn - off behavior is independent of temperature. especially suited for use in pfc and secondary side applications, this st sic diode will boost the performance in hard switching conditions. this rectifier will enhance the performance of the targeted application. its high forward surge capability ensures a good robustness during transient phases. table 1: device summar y symbol value i f(av) 2 a v rrm 1200 v t j (max.) 175 c v f (typ.) 1.35 v a k a k k t o - 2 2 0 a c d p a k h v 2 l a k k
characteristics STPSC2H12 2 / 10 docid030271 rev 1 1 characteristics table 2: absolute ratings (limiting values at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage (t j = - 40 c to +175 c) 1200 v i f(rms) forward rms current 10 a i f(av) average forward current t c = 160 c, dc current t c = 120 c, dc current 2 5 a i frm repetitive peak forward current t c = 160 c, t j = 175 c, = 0.1 9 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal t c = 25 c 15 a t c = 150 c 13 t p = 10 s square t c = 25 c 105 t stg storage temperature range - 65 to +175 c t j operating junction temperature range - 40 to +175 c table 3: thermal parameters symbol parameter typ. max. unit r th(j - c) junction to case 1.9 2.7 c/w table 4: static electrical characteristics symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm - 1 12 a t j = 150 c - 6 80 v f (2) forward voltage drop t j = 25 c i f = 2 a - 1.35 1.50 v t j = 150 c - 1.75 2.25 notes: (1) pulse test: t p = 10 ms, < 2% (2) pulse test: t p = 500 s, < 2% to evaluate the maximum conduction losses, use the following equation: p = 1.12 x i f(av) + 0.565 x i f 2 (rms) table 5: dynamic electrical characteristics symbol parameter test conditions min. typ. max. unit q cj (1) total capacitive charge v r = 800 v - 15.6 - nc c j total capacitance v r = 0 v, t c = 25 c, f = 1 mhz - 190 - pf v r = 800 v, t c = 25 c, f = 1 mhz - 13 - notes: (1) most accurate value for the capacitive charge: ? ?? ( ? ? ) = ? ? ( ? ) ?? ? ? 0
STPSC2H12 characteristics docid030271 rev 1 3 / 10 1.1 characteristics (curves) figure 1 : forward voltage drop versus forward current (typical values) figure 2 : reverse leakage current versus reverse voltage applied (typical values) figure 3 : peak forward current versus case temperature figure 4 : junction capacitance versus reverse voltage applied (typical values) figure 5 : relative variation of thermal impedance junction to case versus pulse duration figure 6 : non - repetitive peak surge forward current versus pulse duration (si nusoidal waveform) 1 . e + 0 1 1 . e + 0 2 1 . e + 0 3 1 . e - 0 5 1 . e - 0 4 1 . e - 0 3 1 . e - 0 2 t p ( s ) t a = 2 5 c t a = 1 5 0 c i f s m ( a ) 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 2 0 0 0 . 1 1 . 0 1 0 . 0 1 0 0 . 0 1 0 0 0 . 0 1 0 0 0 0 . 0 v r ( v ) c j ( p f ) f = 1 m h z v o s c = 3 0 m v r m s t j = 2 5 c 0 . 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . e - 0 5 1 . e - 0 4 1 . e - 0 3 1 . e - 0 2 1 . e - 0 1 1 . e + 0 0 t p ( s ) s i n g l e p u l s e z t h ( j - c ) / r t h ( j - c ) 1 . e - 0 4 1 . e - 0 3 1 . e - 0 2 1 . e - 0 1 1 . e + 0 0 1 . e + 0 1 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 1 0 0 0 1 1 0 0 1 2 0 0 v r ( v ) i r ( a ) t j = 2 5 c t j = 1 5 0 c 0 5 1 0 1 5 2 0 2 5 3 0 3 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 t c ( c ) i m ( a ) t = t p / t t p = 0 . 1 = 0 . 3 = 0 . 5 = 1 = 0 . 7 0 1 2 3 4 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 v f ( v ) i f ( a ) t a = 1 5 0 c p u l s e t e s t : t p = 5 0 0 s t a = 2 5 c
characteristics STPSC2H12 4 / 10 docid030271 rev 1 figure 7 : total capacitive charges versus reverse voltage applied (typical values) figure 8 : thermal resistance junction to ambient versus copper surface under tab on epoxy printed board fr4, e cu = 35 m (typical values) 0 2 4 6 8 1 0 1 2 1 4 1 6 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 v r ( v ) q c j ( n c ) 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 s c u ( c m 2 ) d p a k h v 2 l r t h ( j - a ) ( c / w )
STPSC2H12 package information docid030271 rev 1 5 / 10 2 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. ? epoxy meets ul94, v0 ? cooling method: by co nduction (c) ? recommended torque value: 0.55 nm ? maximum torque value: 0.7 nm 2.1 to - 220ac rectifier package information figure 9 : to - 220ac package outline
package information STPSC2H12 6 / 1 0 docid030271 rev 1 table 6: to - 220ac package me chanical data ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 h2 10.00 10.40 0.393 0.409 l2 16.40 typ. 0.645 typ. l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam 3.75 3.85 0.147 0.151
STPSC2H12 package information docid030271 rev 1 7 / 10 2.2 dpak hv 2l package information figure 10 : dpak hv 2l package outline
package information STPSC2H12 8 / 10 docid030271 rev 1 table 7: dpak hv 2l package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.16 2.29 2.40 0.085 0.090 0.094 a1 0.06 0.08 0.13 0.002 0.003 0.005 b 0.71 0.76 1.07 0.028 0.029 0.030 b3 5.004 5.10 5.21 0.197 0.201 0.205 c 0.46 0.51 0.56 0.018 0.020 0.025 c2 0.76 0.81 0.86 0.029 0.032 0.034 d 5.97 6.10 6.22 0.235 0.240 0.245 d1 5.84 ref 0.230 ref e 6.48 6.60 6.73 0.255 0.260 0.265 e1 4.95 5.08 5.21 0.195 0.200 0.205 e 2.29 ref 0.90 ref h 9.70 9.83 10.08 0.382 0.387 0.397 l 1.02 1.14 1.40 0.040 0.045 0.055 l3 1.14 0.045 l4 (1) 0.000 0.15 0.000 0.006 m 7 7 p 5 5 notes: (1) maximum plastic protrusion figure 11 : footprint (dimensions in mm)
STPSC2H12 ordering information docid030271 rev 1 9 / 10 3 ordering information table 8: ordering information order code marking package weight base qty. delivery mode STPSC2H12d STPSC2H12d to - 220ac 1.86 g 50 tube STPSC2H12b - tr1 stpsc 2h12 dpak hv 2l 0.368 g 2500 tape and reel 4 revision history table 9: document revision history date revision changes 24 - jan - 2017 1 initial release.
STPSC2H12 10 / 10 docid030271 rev 1 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2017 stmicroelectronics C all rights reserved


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